HGT1S12N60B3

Производитель :

Harris Corporation

Категория товара :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

27 A

Current - Collector Pulsed (Icm) :

110 A

Gate Charge :

68 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power - Max :

104 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

I2PAK (TO-262)

Switching Energy :

304µJ (on), 250µJ (off)

Td (on/off) @ 25°C :

26ns/150ns

Test Condition :

480V, 12A, 25Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Voltage - Collector Emitter Breakdown (Max) :

600 V