HGTD3N60B3S9A

Производитель :

Harris Corporation

Категория товара :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

7 A

Current - Collector Pulsed (Icm) :

20 A

Gate Charge :

21 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

33.3 W

Product Status :

Active

Reverse Recovery Time (trr) :

16 ns

Supplier Device Package :

TO-252-3 (DPAK)

Switching Energy :

66µJ (on), 88µJ (off)

Td (on/off) @ 25°C :

18ns/105ns

Test Condition :

480V, 3.5A, 82Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 3.5A

Voltage - Collector Emitter Breakdown (Max) :

600 V