GT30N135SRA,S1E

Производитель :

Toshiba Semiconductor and Storage

Категория товара :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

60 A

Current - Collector Pulsed (Icm) :

120 A

Gate Charge :

270 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-247-3

Power - Max :

348 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-247

Switching Energy :

-, 1.3mJ (off)

Td (on/off) @ 25°C :

-

Test Condition :

300V, 60A, 39Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 60A

Voltage - Collector Emitter Breakdown (Max) :

1350 V