PSMN1R0-40YLDX

Производитель :

Nexperia USA Inc.

Категория товара :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

280A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

127 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

8845 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-100, SOT-669

Power Dissipation (Max) :

198W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.1mOhm @ 25A, 10V

Supplier Device Package :

LFPAK56, Power-SO8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 1mA