HBDM60V600X-7

Производитель :

Diodes Incorporated

Категория товара :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

600mA, 500mA

Current - Collector Cutoff (Max) :

100nA, 50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 10mA, 1V / 100 @ 150mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

SOT-363

Transistor Type :

1 NPN, 1 PNP (H-Bridge)

Vce Saturation (Max) @ Ib, Ic :

400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

60V, 80V